APTGT75H60T3G APTGT75H60T3G ? rev 1 october, 2005 apt website ? http:/ / www.advancedpower.com 1 - 5 absolute maximum ratings symbol parameter max ratings unit v ces collector - emitter breakdown voltage 600 v t c = 25c 100 i c continuous collector current t c = 80c 75 i cm pulsed collector current t c = 25c 140 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 250 w rbsoa reverse bias safe operating area t j = 150c 150a @ 550v these devices are sensitive to electrostatic discharge. proper handing procedures should be followed . q3 11 10 q1 cr1 7 22 13 14 cr3 3 30 29 32 18 19 23 8 15 31 r1 16 4 cr4 cr2 q2 q4 26 27 16 15 18 20 23 22 13 11 12 14 8 7 29 30 28 27 26 3 32 31 10 19 2 25 4 all multiple inputs and outputs must be shorted together example: 13/14 ; 29/30 ; 22/23 ? v ces = 600v i c = 75a @ tc = 80c applicatio n ? welding converters ? switched mode power supplies ? uninterruptible power supplies ? motor control features ? trench + field stop igbt ? technology - low voltage drop - low tail current - switching freque nc y up to 20 khz - soft recovery parallel diodes - low diode vf - low leakage current - avalanche energy rated - rbsoa and scsoa rated ? kelvin emitter for easy drive ? very low stray inductance - symmetrical design ? high level of integration ? internal thermistor for temperature monitoring benefits ? stable temperature behavior ? very rugged ? solderable terminals for easy pcb mounting ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? easy paralleling due to positive tc of vcesat ? low profile ? each leg can be easily paralleled to achieve a phase leg of twice the current capability ? rohs compliant full - bridge trench + field stop igbt ? power modul e
APTGT75H60T3G APTGT75H60T3G ? rev 1 october, 2005 apt website ? http:/ / www.advancedpower.com 2 - 5 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v, v ce = 600v 250 a t j = 25c 1.5 1.9 v ce(sat) collector emitter saturation voltage v ge =15v i c = 75a t j = 150c 1.7 v v ge(th) gate threshold voltage v ge = v ce , i c = 600a 5.0 5.8 6.5 v i ges gate ? emitter leakage current v ge = 20v, v ce = 0v 600 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 4620 c oes output capacitance 300 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 140 pf t d(on) turn-on delay time 110 t r rise time 45 t d(off) turn-off delay time 200 t f fall time inductive switching (25c) v ge = 15v v bus = 300v i c = 75a r g = 12 ? 40 ns t d(on) turn-on delay time 120 t r rise time 50 t d(off) turn-off delay time 250 t f fall time 60 ns e on turn-on switching energy 1.3 e off turn-off switching energy inductive switching (150c) v ge = 15v v bus = 300v i c = 75a r g = 12 ? 2.6 mj reverse diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 600 v t j = 25c 250 i rm maximum reverse leakage current v r =600v t j = 150c 500 a i f dc forward current tc = 80c 75 a t j = 25c 1.6 2 v f diode forward voltage i f = 75a v ge = 0v t j = 150c 1.5 v t j = 25c 125 t rr reverse recovery time t j = 150c 220 ns t j = 25c 3.6 q rr reverse recovery charge i f = 75a v r = 300v di/dt =2000a/s t j = 150c 7.6 c
APTGT75H60T3G APTGT75H60T3G ? rev 1 october, 2005 apt website ? http:/ / www.advancedpower.com 3 - 5 temperature sensor ntc (see application note apt0406 on www.advancedpower.com for more information). symbol characteristic min typ max unit r 25 resistance @ 25c 50 k ? b 25/85 t 25 = 298.15 k 3952 k ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? = t t b r r t 1 1 exp 25 85 / 25 25 thermal and package characteristics symbol characteristic min typ max unit igbt 0.60 r thjc junction to case thermal resistance diode 0.98 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j operating junction temperature range -40 175 t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m4 1.5 4.7 n.m wt package weight 110 g sp3 package outline (dimensions in mm) 17 12 28 1 t: thermistor temperature r t : thermistor value at t
APTGT75H60T3G APTGT75H60T3G ? rev 1 october, 2005 apt website ? http:/ / www.advancedpower.com 4 - 5 typical performance curve output characteristics (v ge =15v) t j =25c t j =25c t j =125c t j =150c 0 25 50 75 100 125 150 00.511.522.53 v ce (v) i c (a) output characteristics v ge =15v v ge =13v v ge =19v v ge =9v 0 25 50 75 100 125 150 00.511.522.533.5 v ce (v) i c (a) t j = 150c transfert characteristics t j =25c t j =25c t j =125c t j =150c 0 25 50 75 100 125 150 56789101112 v ge (v) i c (a) energy losses vs collector current eon eon eoff er 0 1 2 3 4 5 0 255075100125150 i c (a) e (mj) v ce = 300v v ge = 15v r g = 12 ? t j = 150c eon eon eoff eoff er 0 2 4 6 8 10 0 1020304050607080 gate resistance (ohms) e (mj) v ce = 300v v ge =15v i c = 75a t j = 150c switching energy losses vs gate resistance reverse bias safe operating area 0 25 50 75 100 125 150 175 0 100 200 300 400 500 600 700 v ce (v) i c (a) v ge =15v t j =150c r g =12 ? maximum effective transient thermal impedance, junction to pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration in seconds thermal impedance (c/w) igbt
APTGT75H60T3G APTGT75H60T3G ? rev 1 october, 2005 apt website ? http:/ / www.advancedpower.com 5 - 5 forward characteristic of diode t j =25c t j =125c t j =150c 0 25 50 75 100 125 150 0 0.4 0.8 1.2 1.6 2 2.4 v f (v) i c (a) hard switching zcs zvs 0 20 40 60 80 100 120 0 20406080100 i c (a) fmax, operating frequency (khz) v ce =300v d=50% r g =12 ? t j =150c t c =85c operating frequency vs collector current maximum effective transient thermal impedance, junction to pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.2 0.4 0.6 0.8 1 1.2 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration in seconds thermal impedance (c/w) diode apt re s e rves the rig ht to c ha nge , witho ut notice , the s pe cificatio ns and info rma tio n co nta ine d he re in apt's products are covered by one or more of u.s patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. u.s and foreign pa tents pending. all rights reserved.
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